Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates

ABSTRACT

A method and apparatus for mechanically and/or chemical-mechanically planarizing microelectronic substrates. In one embodiment in accordance with the principles of the present invention, a microelectronic substrate is planarized or polished on a planarizing medium having a thin film and a plurality of micro-features on the film. The film may be an incompressible sheet or web substantially impervious to a planarizing solution, and the micro-features may be configured in a selected pattern on the film to restrain fluid flow of the planarizing solution across the surface of the film under the substrate. The micro-features, for example, may be configured in a selected pattern that has a plurality of support points and at least one cavity to entrap a substantially contiguous, uniform distribution of the solution under the substrate during planarization. Additionally, the selected pattern of micro-features may be reproduced from a master pattern of micro-features to duplicate the selected pattern on several sections of film so that a consistent planarizing surface may be provided for a large number of substrates.

TECHNICAL FIELD

[0001] The present invention relates to mechanical andchemical-mechanical planarization of microelectronic substrates. Moreparticularly, an embodiment of the present invention relates to aplanarization polishing pad for enhancing the performance and/orreducing the costs of planarizing substrates, and to methods of usingand making the polishing pad.

BACKGROUND OF THE INVENTION

[0002] Mechanical and Chemical-Mechanical planarization processes removematerial from the surface of semiconductor wafers, field emissiondisplays and many other microelectronic substrates to form a flatsurface at a desired elevation in the substrates. FIG. 1 schematicallyillustrates a planarizing machine 10 with a platen 20, a carrierassembly 30, a polishing pad 40, and a planarizing solution 44 on thepolishing pad 40. The planarizing machine 10 may also have acompressible under-pad 25 attached to an upper surface 22 of the platen20 for supporting the polishing pad 40. In many planarizing machines, adrive assembly 26 rotates (arrow A) and/or reciprocates (arrow B) theplaten 20 to move the polishing pad 40 during planarization.

[0003] The carrier assembly 30 controls and protects a substrate 12during planarization. The carrier assembly 30 generally has a lowersurface 32 with a pad 34 that holds the substrate 12 via suction, and anactuator assembly 36 is typically attached to the carrier assembly 30 torotate and/or translate the substrate 12 (arrows C and D, respectively).However, some carrier assemblies 30 are weighted, free-floating disks(not shown) that slide over the polishing pad 40.

[0004] The polishing pad 40 and the planarizing solution 44 mayseparately, or in combination, define a polishing environment thatmechanically and/or chemically removes material from the surface of thesubstrate 12. The polishing pad 40 may be a conventional polishing padmade from a relatively compressible, porous continuous phase matrixmaterial (e.g., polyurethane), or it may be an abrasive polishing padwith abrasive particles fixedly bonded to a suspension medium. Theplanarizing solution 44 may be a chemical-mechanical planarizationslurry with abrasive particles and chemicals for use with a conventionalnon-abrasive polishing pad, or the planarizing solution 44 may be aliquid without abrasive particles for use with an abrasive polishingpad. To planarize the substrate 12 with the planarizing machine 10, thecarrier assembly 30 presses the substrate 12 against a planarizingsurface 42 of the polishing pad 40 in the presence of the planarizingsolution 44. The platen 20 and/or the carrier assembly 30 then moverelative to one another to translate the substrate 12 across theplanarizing surface 42. As a result, the abrasive particles and/or thechemicals in the polishing environment remove material from the surfaceof the substrate 12.

[0005] Planarizing processes must consistently and accurately produce auniformly planar surface on the substrate to enable precise fabricationof circuits and photo-patterns on the substrate. As the density ofintegrated circuits increases, the uniformity and planarity of thesubstrate surface is becoming increasingly important because it isdifficult to form sub-micron features or photo-patterns to within atolerance of approximately 0.1 μm when the substrate surface is notuniformly planar. Thus, planarizing processes must create a highlyuniform, planar surface on the substrate.

[0006] In conventional planarizing processes, the substrate surface maynot be uniformly planar because the rate at which material is removedfrom the substrate surface (the “polishing rate”) typically varies fromone region on the substrate to another. The polishing rate depends, inpart, upon the distribution of abrasive particles and chemicals betweenthe substrate surface and the polishing pad. One particular problem withconventional planarizing devices and methods is that the perimeter ofthe substrate wipes a significant amount of the planarizing solution offof the polishing pad. As such, the planarizing solution builds up in ahigh zone along a leading edge of the substrate, which reduces thevolume of planarizing solution contacting the center of the substrate.Conventional planarizing devices and methods, therefore, typicallyproduce a non-uniform, center-to-edge planarizing profile across thesubstrate surface.

[0007] To reduce such a center-to-edge planarizing profile, severalconventional non-abrasive polishing pads have holes or grooves on theirupper surfaces to transport a portion of the planarizing solution belowthe substrate surface during planarization. A Rodel IC-1000 polishingpad, for example, is a relatively soft, porous polyurethane pad with anumber of large slurry wells approximately 0.05-0.10 inches in diameterthat are spaced apart from one another across the planarization surfaceby approximately 0.125-0.25 inches. The large wells are expected to holdsmall volumes of slurry below the planarizing surface so that thesubstrate may draw the slurry out of the wells as the substratetranslates over the pad. However, such pads still produce a significantcenter-to-edge planarizing profile indicating that the perimeter of thesubstrate presses some of the slurry out of the wells ahead of thecenter of the substrate. U.S. Pat. No. 5,216,843 describes anotherpolishing pad with a plurality of macro-grooves formed in concentriccircles and a plurality of micro-grooves radially crossing themacro-grooves. Although such grooves may improve the planarity of thesubstrate surface, substrates planarized with such pads still exhibitnon-uniformities across the substrate surface indicating an inadequatedistribution of planarizing solution and abrasive particles across thesubstrate.

[0008] Other types of polishing pads also do not adequately resolve thecenter-to-edge planarizing profile. For example, conventional porouspolishing pads with small micro-pores at the planarizing surface aregenerally subject to producing a center-to-edge planarizing profileindicating that the perimeter of the substrate presses the planarizingsolution out of the pores before the center of the substrate passes overthe pores. Additionally, even fixed-abrasive polishing pads that have auniform distribution of abrasive particles may produce a center-to-edgeplanarizing profile because the perimeter of the substrate also tends tosweep the planarizing solution off of abrasive polishing pads.Therefore, conventional polishing pads typically produce an undesiredcenter-to-edge planarizing profile on the substrate surface.

[0009] To improve the distribution of slurry under the substrate, U.S.Pat. No. 5,489,233 discloses a polishing pad composed of a solid,uniform polymer sheet having no intrinsic ability to absorb or transportslurry particles. One type of polymer sheet disclosed in U.S. Pat. No.5,489,233 is Mylar® manufactured by E.I. du Pont de Nemours ofWilmington, Del. The Polymer sheet has a surface pattern or texture thathas both large and small flow channels to permit the transport of slurryacross the surface of the polishing pad. The channels are mechanicallyproduced on the pad. In a preferred embodiment, the pad has amacro-texture produced prior to planarization and a micro-textureproduced by abrading the pad with a plurality of small abrasive pointsat regular selected intervals during planarization. Although the paddisclosed in U.S. Pat. No. 5,489,233 improves the uniformity of thesubstrate surface in some circumstances, it may not provide consistentplanarization characteristics because scratching the surface with smallabrasive points may not duplicate the micro-texture from one pad to thenext. Thus, the polishing pad described in U.S. Pat. No. 5,489,233 maynot provide consistent results from one substrate to the next.

[0010] Another factor affecting the uniformity of the substrate surfaceis the condition of the polishing pad. The planarizing surface of thepolishing pad typically deteriorates after polishing a number ofsubstrates because waste matter from the substrate, planarizing solutionand/or the polishing pad accumulates on the planarizing surface. Thewaste matter alters the local planarizing characteristics of the pad,and the waste matter typically does not accumulate uniformly across theplanarizing surface. Thus, the waste matter accumulations cause thepolishing rate to vary across the surface of the polishing pad.

[0011] Polishing pads are accordingly “conditioned” by removing thewaste matter from the pad to restore the polishing pad to a suitablecondition for planarizing substrates. However, even conditioningpolishing pads may produce non-uniformities in the substrate surfacebecause it is difficult to consistently condition a polishing pad sothat it has the same planarizing characteristics from one conditioningcycle to the next. Conditioning the polishing pads, moreover, istime-consuming and requires costly equipment and labor. Therefore, inaddition to the problems associated with providing an adequatedistribution of planarizing solution between the substrate surface andthe polishing pad, conditioning conventional polishing pads may alsoreduce the uniformity of the planarized substrate surface.

SUMMARY OF THE INVENTION

[0012] The present invention is a method and apparatus for mechanicallyand/or chemical-mechanically planarizing microelectronic substrates. Inone embodiment in accordance with the principles of the presentinvention, a microelectronic substrate is planarized or polished on aplanarizing medium having a thin film and a plurality of micro-featureson the film. The film may be an incompressible sheet or websubstantially impervious to a planarizing solution, and themicro-features may be configured in a selected pattern on the film torestrain fluid flow of the planarizing solution across the surface ofthe film under the substrate. The micro-features, for example, may beconfigured in a selected pattern with a plurality of substantiallyincompressible first raised features defining support points, at leastone cavity below the support points, and a plurality of second raisedfeatures between and below the support points. The support points,cavity, and second raised features may operate to entrap a substantiallycontiguous, uniform distribution of the solution under the substrateduring planarization. Additionally, the selected pattern ofmicro-features may be reproduced from a master pattern of micro-featuresto duplicate the selected pattern on the film so that a consistentplanarizing surface may be provided for a large number of substrates.

[0013] The planarizing film may be composed of a number of differentmaterials, and the micro-features may have a number of differentconfigurations. For example, the film may be composed of a suitablepolymeric material (e.g., Mylar® or Lexan®), or other flexible andsubstantially incompressible materials. The micro-features may benodules with a plurality of shapes and heights formed from the filmmaterial, or the nodules may be a fine mesh of woven fibers formedseparately from the film. The nodules are generally patterned on thefilm to form a plurality of depressions that entrap the solution underthe substrate, and a portion of the nodules preferably have flat topsterminating at a constant maximum height across the planarizing surfaceof the film to define the first raised features. The selected pattern ofnodules and depressions may be produced by embossing the nodule patternon the film, etching the depressions into the film, or other suitabletechniques that may consistently reproduce the selected pattern ofnodules on the planarizing film.

[0014] Planarizing mediums in accordance with the invention may beadapted to work with a variety of different planarizing machines. In oneembodiment, for example, the film is a contiguous, flexible web with aplurality of sections that each have a planarizing surface with theselected pattern of micro-features. The flexible web may be indexed withrespect to a work station or planarizing station of the planarizingmedium so that all or only a part of a section is moved across the workstation. When all of a section is advanced across the work station, afirst section of the web may be held at the work station to planarize afirst substrate and then a second section of the web may be held at thework station to planarize subsequent substrates. In another embodiment,the planarizing film may have a plurality of separate sheets in whicheach sheet has a planarizing surface, with one or more sections havingthe selected pattern of micro-features. As such, a first sheet is usedto planarize a number of substrates until it deteriorates beyond anacceptable point, and then it may be replaced by a second sheet toplanarize a number of additional substrates. In either the web or sheetfilms, the sections may be integral with one another or they may beseparate segments attached to one another.

BRIEF DESCRIPTION OF THE DRAWINGS

[0015]FIG. 1 is a schematic view of a planarizing machine in accordancewith the prior art.

[0016]FIG. 2 is a schematic view of a planarizing machine with aplanarizing medium in accordance with an embodiment of the invention.

[0017]FIG. 3 is a partial isometric view of a planarizing medium with aplanarizing film and a plurality of micro-features in accordance withone embodiment of the invention.

[0018]FIG. 4 is a partial schematic cross-sectional view of theplanarizing medium shown in FIG. 3 along section 4-4.

[0019]FIG. 5 is a partial schematic cross-sectional view of theplanarizing medium of FIG. 4 shown planarizing a substrate using aplanarizing solution with abrasive particles in accordance with anembodiment of the invention.

[0020]FIG. 6 is a partial schematic isometric view of anotherplanarizing medium in accordance with another embodiment of theinvention.

DETAILED DESCRIPTION OF THE INVENTION

[0021] The present invention is an apparatus and method for mechanicaland/or chemical-mechanical planarization of substrates used in themanufacturing of microelectronic devices. Many specific details ofcertain embodiments of the invention are set forth in the followingdescription and in FIGS. 2-6 to provide a thorough understanding of suchembodiments. One skilled in the art, however, will understand that thepresent invention may have additional embodiments and may be practicedwithout several of the details described in the following description.

[0022]FIG. 2 is a schematic view of an embodiment of a planarizingmachine 100 and a planarizing medium 140 for planarizing a substrate 12.The features and advantages of the planarizing medium 140 are bestunderstood in the context of the structure and operation of theplanarizing machine 100. Thus, the general features of the planarizingmachine 100 will be described initially.

[0023] The planarization machine 100 may have a support table 110carrying a base 112 at a workstation or a planarization station where asection “A” of the planarizing medium 140 is positioned. The base 112 isgenerally a substantially incompressible support member attached to thetable 110 to provide a flat, solid surface to which a particular sectionof the planarizing medium 140 may be secured during planarization. Theplanarizing machine 100 also has a plurality of rollers to guide,position and hold the planarizing medium 140 over the base 112. In oneembodiment, the rollers include a supply roller 120, first and secondidler rollers 121 a and 121 b, first and second guide rollers 122 a and122 b, and a take-up roller 123. The supply roller 120 carries an unusedpart of the planarizing medium 140, and the take-up roller 123 carries aused part of the planarizing medium 140. The supply roller 120 andtake-up roller 123 are driven rollers to sequentially advance unusedportions of the planarizing medium 140 onto the base 112. As such,unused portions of the planarizing medium may be quickly substituted forworn used portions to provide a consistent surface for planarizing thesubstrate 12. Each portion of the planarizing medium 140 may correspondto an individual section “A” of the planarizing medium 140, but eachportion may also be more or less than an individual section “A.” Thefirst idler roller 121 a and the first guide roller 122 a position theplanarizing medium 140 slightly below the base 112 so that the supplyand take-up rollers 120 and 123 stretch the planarizing medium 140 undertension to hold it stationary on the base 112 during planarization.

[0024] The planarization machine 100 also has a carrier assembly 130 totranslate the substrate 12 across the planarizing medium 140. In oneembodiment, the carrier assembly 130 has a substrate holder 132 to pickup, hold and release the substrate 12 at appropriate stages of theplanarization process. The carrier assembly 130 may also have a supportgantry 134 carrying an actuator 136 so that the actuator 136 cantranslate along the gantry 134. The actuator 136 preferably has a driveshaft 137 coupled to an arm assembly 138 that carries the substrateholder 132. In operation, the gantry 134 raises and lowers the substrate12, and the actuator 136 orbits the substrate 12 about an axis B-B viathe drive shaft 137. In another embodiment, the arm assembly 138 mayalso have an actuator (not shown) to drive a shaft 139 of the armassembly 138 and thus rotate the substrate holder 132 about an axis C-Cas the substrate holder 132 also orbits about the axis B-B. One suitableplanarizing machine is manufactured by EDC Corporation. In light of theembodiment of the planarizing machine 100 described above, a specificembodiment of the planarizing medium 140 will now be described.

[0025]FIG. 3 is a partial isometric view of an embodiment of theplanarizing medium 140, and FIG. 4 is a partial schematiccross-sectional view of the planarizing medium 140 shown in FIG. 3 takenalong section 4-4. The planarizing medium 140 has a planarizing film 142and a plurality of micro-features 146 configured in a selected patternon the film 142. The planarizing film 142 may be composed of a thin,inexpensive material that is impervious to the planarizing solution orgenerally impermeable to fluids. The planarizing film 142 is alsopreferably a flexible, yet substantially incompressible material thathas a relatively high tensile strength. For example, the planarizingfilm may be a disposable material with a thickness between approximately0.0005 inches and 0.050 inches. In some particular embodiments of theplanarizing medium 140, the planarizing film 142 may be a mono-layer webor sheet composed of polymeric or other suitable materials. For example,two specific polymers suitable for the planarizing film 142 arepolyester (e.g., Mylar manufactured by E.I. du Pont de Nemours Co.) andpolycarbonate (e.g., Lexan manufactured by General Electric Co.). Othersuitable polymers include polyurethane and nylon.

[0026] The micro-features 146 may be configured in a selected pattern onthe film 142 to restrain fluid flow or otherwise entrap smallmicro-volumes of the planarizing solution (not shown) under a substratesurface (not shown) across the film 142. The selected pattern ofmicro-features 146 may be reproduced from a master pattern thatconsistently duplicates the selected pattern across all or a portion ofthe planarizing medium 140. In one embodiment, for example, the selectedpattern is duplicated on portions of the planarizing medium 140corresponding to the size of the section “A” at the planarizationstation of the planarizing machine 100 (FIG. 2). Accordingly, theplanarizing characteristics of the planarizing medium 140 are consistentfrom one section to the next to enhance the accuracy of the planarizingprocess. The selected pattern of micro-features 146 may be asubstantially random distribution of features across the planarizingfilm 142, or the micro-features may be formed in a substantiallysymmetrical, uniform pattern. The micro-features 146 may also be formedintegrally with the film 142, or the micro-features may be composed of aseparate material attached to a flat sheet of film.

[0027] As shown in FIGS. 3 and 4, the micro-features 146 may be noduleswith different shapes and heights that form depressions 148 in the film142 between the nodules 146. As best shown in FIG. 4, the planarizingfilm 142 has a contiguous portion 144 up to a height H_(B), and thenodules 146 extend upwardly from the height H_(B) to a plurality ofdifferent heights. For example, a few of the nodules 146 may extend to aplurality of intermediate heights H₁ and H₂, while other nodules areflat-top nodules 147 terminating at a substantially constant heightH_(max) defining a planarizing surface 150 (FIG. 4 only) of theplanarizing medium 140. The flat-top nodules 147 may define first raisedfeatures that act as support points on the planarizing surface 150 toengage or otherwise support the substrate 12, and the remaining nodules146 with intermediate heights may define second raised features.Additionally, the depressions 148 may form at least one cavity below theflat-top nodules 147. In another embodiment, even the highest nodulesmay have rounded peaks 149 (shown in phantom in FIG. 4) instead of theflat-top nodules 147. The nodules 146 preferably have heights of 0.5 μmto 100 μm with respect to the height H_(B), and they are approximately50 μm to 500 μm across at their base.

[0028] The selected pattern of micro-features 146 and depressions 148illustrated in FIGS. 3 and 4 represents only one embodiment of aplanarizing medium 140 suitable for planarizing microelectronicsubstrates. As such, virtually any pattern of micro-features thatprovides an adequate distribution of planarizing solution and abrasiveparticles underneath a substrate during planarizing may be used.Additionally, the nodules 146 may have other sizes and heights outsideof the ranges set forth above.

[0029] The micro-features 146 may be formed on the planarizing film 142by a number of methods. For example, when the planarizing film 142 iscomposed of a polymeric material, the selected pattern of micro-features146 may be duplicated on the planarizing medium 140 by embossing theselected pattern of micro-features onto the planarizing film 142 with adie or stamp having the inverse of the selected pattern ofmicro-features. The die may be pressed against the planarizing film at atemperature sufficient to allow the film to permanently conform to thetopography of the die. In the embodiment of the planarizing medium 140illustrated in FIGS. 3 and 4, the micro-features 146 are formed byembossing a 0.010 to 0.020 inch thick film of Lexan with a die having apattern of rounded nodules, and then planarizing a sacrifice wafer onthe rounded nodules to form the flat-top nodules 147 at the maximumheight H_(max). In another embodiment, the selected pattern may bephoto-patterned and then etched into the planarizing film. Thus, unlikemicro-features that are scratched or abraded into a thin sheet, theselected pattern may be accurately duplicated across all or part of theplanarizing medium to provide consistent planarization characteristicsfrom one substrate to the next.

[0030]FIG. 5 is a schematic cross-sectional view that illustrates theoperation and some advantages of the planarizing medium 140. Inoperation, a supply line (not shown) deposits planarizing solution 44onto the planarizing medium 140 as the carrier assembly 30 (FIG. 1)translates the substrate 12 over the flat-top nodules 147. A smallvolume of the planarizing solution 44 accumulates in the depressions 148between the nodules 146. Additionally, when the planarizing solutioncontains abrasive particles 45, a portion of the abrasive particles 45may also accumulate in the depressions 148. The depressions 148accordingly provide at least one large cavity under the flat-top nodules147 to preferably hold a substantially uniform, contiguous distributionof planarizing solution 44 and abrasive particles 45 under a surface 14of the wafer 12. The nodules 146 restrain the flow or otherwise entrapthe planarizing solution 44 and the abrasive particles 45 to inhibit theperimeter of the substrate 12 from sweeping the solution 44 and theparticles 45 off of the medium 140. Additionally, when nodules 146 aresubstantially incompressible, the flat-topped nodules 147 prevent thesubstrate 12 from penetrating into the depressions 148 and forcing theplanarizing solution 44 and the abrasive particles 45 out of thedepressions 148.

[0031] Compared to conventional polishing pads, the planarizing medium140 is expected to produce highly uniform, planar surfaces onsemiconductor wafers and other microelectronic substrates. Theplanarizing medium 140 is believed to improve the planarizingperformance because the micro-features 146 restrain the fluid flow orotherwise entrap a substantially uniform, contiguous distribution ofplanarizing solution 44 and abrasive particles 45 in the depressions 148underneath the surface 14 of the substrate 12. Additionally, the film142 may be a highly planar, substantially incompressible sheet or webthat does not conform to the topography of the substrate surface 14. Theplanarizing medium 140 accordingly imparts high mechanical energy tohigh points on the substrate surface 14, while inhibiting the substrate12 from sweeping the planarizing solution 44 and abrasive particles 45off of the planarizing medium 140.

[0032] In addition to the advantages described above, the planarizingmedium 140 illustrated in FIGS. 3-5 may also provide a very consistent,inexpensive surface for planarizing substrates. Unlike conventionalpolishing pads composed of polyurethane or containing fixed abrasiveparticles, the planarizing medium 140 may be composed of an inexpensive,disposable film 142 that may be economically thrown away after theplanarizing surface 150 is no longer in a state suitable for planarizingsubstrates. As a result, expensive conditioning equipment and skilledlabor are not necessary to provide a clean planarizing surface.Additionally, because the selected pattern of micro-features may beduplicated across the planarizing medium 140, consistent planarizingcharacteristics may be maintained over a larger number of substrates.Therefore, the planarizing medium 140 may not only eliminate the need toconstantly condition the planarizing surface, it may also enhance theconsistency of the planarizing characteristics over a large number ofsubstrates.

[0033]FIG. 6 is a partial schematic isometric view illustrating anotherembodiment of a planarizing medium 240 in accordance with the inventionwith a planarizing film 242 and a plurality of micro-features 246 formedseparately from the planarizing film 242. The planarizing film 242 maybe similar to the film 142 discussed above with respect to FIGS. 3-5.The micro-features 246, however, may be a fine woven mesh of strandsattached to the film 242. For example, the micro-features 246 may be awoven mesh of 2.0 μm to 5.0 μm diameter nylon strands spaced apart byopenings 248 that define approximately 0.5% to 5% of the surface area ofthe mesh. The woven mesh accordingly has a plurality of first raisedfeatures defined by high points 247 along the strands, a plurality ofsecond raised features 249 defined by the remainder of the strands abovethe film 242, and at least one cavity below the high points 247 of thestrands defined by the openings 248. The micro-features 246 and openings248 of the planarizing medium 240 may thus capture and contain aplanarizing solution (not shown) beneath the high points 247 of themicro-features 246 to provide a substantially uniform distribution ofplanarizing solution and abrasive particles underneath the substrate(not shown) during planarization. The embodiment of the planarizingmedium 240 illustrated in FIG. 6, therefore, may achieve many of thesame advantages described above with respect to the embodiment of theplanarizing medium 140 illustrated in FIGS. 3-5.

[0034] From the foregoing it will be appreciated that, although specificembodiments of the invention have been described herein for purposes ofillustration, various modifications may be made without deviating fromthe spirit and scope of the invention. For example, other patterns ofmicro-features may be used, and the woven mesh shown in FIG. 6 may becomposed of strands made from other materials. Additionally, planarizingmedia in accordance with the invention are not necessarily limited orrequired to achieve substantially the same results as the embodiments ofplanarizing media 140 and 240 described above. The invention, therefore,is not limited except as by the appended claims.

1. A planarizing medium for planarizing microelectronic substrates,comprising: a planarizing film impervious to a solution; and a pluralityof micro-features configured in a selected, duplicated pattern on thefilm, the selected pattern having a plurality of first raised featuresdefining support points, at least one cavity below the support points,and a plurality of second raised features between and below the supportpoints.
 2. The planarizing medium of claim 1 wherein the film iscomposed of a substantially incompressible polymer and the first andsecond raised features are formed from the film.
 3. The planarizingmedium of claim 2 wherein the polymer comprises polyester.
 4. Theplanarizing medium of claim 2 wherein the copolymer comprisespolycarbonate.
 5. The planarizing medium of claim 2 wherein the polymercomprises polyurethane.
 6. The planarizing medium of claim 2 wherein thepolymer comprises nylon.
 7. The planarizing medium of claim 2 whereinthe first and second raised features comprise nodules having a pluralityof shapes and heights, the nodules being patterned on the film to form aplurality of depressions between the nodules and so that at least aportion of the nodules define the support points.
 8. The planarizingmedium of claim 7 wherein the first raised features have flat topsterminating at a constant maximum height across the planarizing surfaceof the film.
 9. The planarizing medium of claim 7 wherein the nodulesare embossed on the film.
 10. The planarizing medium of claim 9 whereinthe selected pattern is substantially random configuration of nodulesacross an operating region of the planarizing surface.
 11. Theplanarizing medium of claim 10 wherein the polymer comprises polyester.12. The planarizing medium of claim 10 wherein the copolymer comprisespolycarbonate.
 13. The planarizing medium of claim 1 wherein: the filmcomprises a polymer body with an upper surface; and the micro-featurescomprise a fine mesh on the upper surface of the film having wovenstrands, the first raised features being high points along the strandsand the second raised features being side portions of the strands. 14.The planarizing medium of claim 13 wherein: the polymer comprisespolyester; and the fine mesh comprises small nylon fibers woven in amesh with 0.5% to 5% openings.
 15. The planarizing medium of claim 14wherein the nylon fiber comprise 2.0 μm to 5.0 μm fibers.
 16. Theplanarizing medium of claim 1 wherein the film comprises a flexible webwrapped around a supply roller and a take-up roller, and wherein thepattern of micro-features is duplicated across the web.
 17. Theplanarizing medium of claim 16 wherein a first portion of the web isheld at a work station of a planarization machine to planarize a firstsubstrate, and the web is subsequently advanced to position a secondportion of the web at the work station to planarize a second substrate.18. The planarizing medium of claim 1 wherein the planarizing filmcomprises a separate sheet removably attached to a work station of aplanarization machine.
 19. A planarizing medium for planarizing amicroelectronic substrate, comprising: an impermeable planarizing film;and a plurality of non-abrasive micro-features on the planarizing filmdefining a planarizing surface, the micro-features being formed in adefined, consistently reproduced pattern on the planarizing film tocontain planarizing solution between the micro-features and under thesubstrate during planarization.
 20. The planarizing medium of claim 19wherein the film is composed of a substantially incompressible polymerand the micro-features are formed from the film.
 21. The planarizingmedium of claim 20 wherein the micro-features comprise nodules having aplurality of shapes and heights, the nodules being patterned on the filmto form a plurality of depressions between the nodules that entrap thesolution.
 22. The planarizing medium of claim 20 wherein a portion ofthe nodules have flat tops terminating at a constant maximum heightacross the planarizing surface of the film.
 23. The planarizing mediumof claim 20 wherein the nodules are embossed on the film.
 24. Theplanarizing medium of claim 20 wherein the depressions are etched intothe film.
 25. The planarizing medium of claim 20 wherein the selectedpattern is substantially random configuration of nodules across anoperating region of the planarizing surface.
 26. The planarizing mediumof claim 19 wherein: the film comprises a polymer body with an uppersurface; and the micro-features comprise a fine mesh on the uppersurface of the film.
 27. The planarizing medium of claim 19 wherein thefilm comprises a flexible web wrapped around a supply roller and atake-up roller, wherein the selected pattern of micro-features isduplicated across the web.
 28. The planarizing medium of claim 27wherein a first portion of the web is held at a work station of aplanarizing machine to planarize a first substrate, and the web issubsequently advanced to position a second portion of the web at thework station to planarize a second substrate.
 29. The planarizing mediumof claim 19 wherein the planarizing film comprises a separate sheetremovably attached to a work station of a planarizing machine.
 30. Theplanarizing medium of claim 19 wherein the film comprises polyester. 31.The planarizing medium of claim 19 wherein the film comprisespolycarbonate.
 32. The planarizing medium of claim 19 wherein the filmcomprises polyurethane.
 33. The planarizing medium of claim 19 whereinthe film comprises nylon.
 34. A planarizing medium for planarizing amicroelectronic substrate, comprising: a support base positionable on aplanarizing machine; and a separate non-abrasive, incompressibleplanarizing film positioned on the base, the planarizing film having aplurality of micro-features configured in a selected pattern on the filmfor restraining fluid flow of a solution across a planarizing surface ofthe film, the selected pattern being reproduced from a master pattern ofmicro-features so that the planarizing medium may be duplicated.
 35. Theplanarizing medium of claim 34 wherein the film comprises a flexible webwrapped around a supply roller and a take-up roller, and wherein aportion of the web extending between the supply and take-up rollers isheld over the base.
 36. The planarizing medium of claim 35 wherein theweb is held stationary over the base during planarization by tensioningthe web between the supply and take-up rollers.
 37. The planarizingmedium of claim 34 wherein the film comprises a separate sheet removablyattached to the base.
 38. The planarizing medium of claim 37 wherein thesheet is clamped to the base under tension.
 39. The planarizing mediumof claim 34 wherein the base comprises an incompressible plate.
 40. Theplanarizing medium of claim 34 wherein the film is composed of asubstantially incompressible polymer and the micro-features are formedfrom the film.
 41. The planarizing medium of claim 34 wherein themicro-features comprise nodules having a plurality of shapes andheights, the nodules being patterned on the film to form a plurality ofdepressions between the nodules that entrap the solution.
 42. Theplanarizing medium of claim 41 wherein a portion of the nodules haveflat tops terminating at a constant maximum height across theplanarizing surface of the film.
 43. The planarizing medium of claim 41wherein the nodules are embossed on the film.
 44. The planarizing mediumof claim 41 wherein the depressions are etched into the film.
 45. Theplanarizing medium of claim 41 wherein the selected pattern issubstantially random configuration of nodules across an operating regionof the planarizing surface.
 46. The planarizing medium of claim 34wherein: the film comprises a polymer; and the micro-features comprisesa fine mesh on the film.
 47. A planarizing machine, comprising: a tablewith a support base; a planarizing medium having a planarizing film anda plurality of micro-features on the film configured in a selected,repeated pattern, the pattern having a plurality of first raisedfeatures defining support points, at least one cavity below the supportpoints, and a plurality of second raised features between and below thesupport points; and a carrier assembly having a substrate holderpositionable over the film, wherein at least one of the film and theholder moves to translate a substrate across the film duringplanarization.
 48. The planarizing machine of claim 47 wherein the filmis composed of a substantially incompressible polymer and themicro-features are formed from the film.
 49. The planarizing machine ofclaim 48 wherein the micro-features comprise nodules having a pluralityof shapes and heights, the nodules being patterned on the film to form aplurality of depressions between the nodules that entrap the solution.50. The planarizing machine of claim 48 wherein a portion of the noduleshave flat tops terminating at a constant maximum height across theplanarizing surface of the film.
 51. The planarizing machine of claim 48wherein the nodules are embossed on the film.
 52. The planarizingmachine of claim 48 wherein the depressions are etched into the film.53. The planarizing machine of claim 48 wherein the selected pattern issubstantially random configuration of nodules across an operating regionof the planarizing surface.
 54. The planarizing machine of claim 47wherein: the film comprises a polymer; and the micro-features comprisesa fine mesh on the film.
 55. The planarizing machine of claim 47wherein: the film comprises a flexible web upon which the selectedpattern of micro-features is duplicated; and the planarizing machinefurther comprises a supply roll around which an unused part of the webis wound and a take-up roll around which a used part of the web iswound, the supply and take-up rolls selectively advancing the web toposition desired portions of the web over the base, and the web beingselectively tensioned between the supply and take-up rolls to hold theweb stationary during planarization.
 56. The planarizing machine ofclaim 47 wherein the planarizing film comprises a plurality of separatesheets removably attached to the base, wherein each sheet has theselected pattern of micro-features.
 57. A planarizing medium forplanarizing microelectronic substrates, comprising: a disposablemono-layer planarizing film having a thickness of between approximately0.0005 and 0.050 inches and a planarizing surface with a plurality ofmicro-features, the plurality of micro-features defining finedepressions across the planarizing surface having depths between 0.5 and100 μm.
 58. The planarizing medium of claim 57 wherein the filmcomprises a flexible web adapted to be wrapped around a supply rollerand a take-up roller so that the web may be indexed across a planarizingstation of a planarizing machine.
 59. The planarizing medium of claim 58wherein the web comprises a polymer material.
 60. The planarizing mediumof claim 59 wherein the polymer material comprises polyester.
 61. Theplanarizing medium of claim 59 wherein the polymer material comprisespolycarbonate.
 62. The planarizing medium of claim 59 wherein thepolymer web has a thickness approximately between 0.0005 and 0.003inches.
 63. The planarizing medium of claim 62 wherein the depths of thedepressions formed by the micro-features is approximately between 1 and10 μm.
 64. The planarizing medium of claim 63 wherein the web has aplurality of sections and each section has an identical pattern ofmicro-features.
 65. The planarizing medium of claim 57 wherein the filmcomprises a sheet adapted to be attached to a planarizing station of aplanarizing machine.
 66. The planarizing medium of claim 65 wherein thesheet comprises a polymer material.
 67. The planarizing medium of claim66 wherein the polymer material comprises polyester.
 68. The planarizingmedium of claim 66 wherein the polymer material comprises polycarbonate.69. The planarizing medium of claim 66 wherein the copolymer sheet has athickness approximately between 0.0005 and 0.003 inches.
 70. Theplanarizing medium of claim 69 wherein the depths of the depressionsformed by the micro-features is approximately between 1 and 10 μm. 71.The planarizing medium of claim 70 wherein the sheet has a plurality ofsections and each section has an identical pattern of micro-features.72. The planarizing medium of claim 57 wherein the depths of thedepressions formed by the micro-features is approximately between 0.5 μmand 10 μm.
 73. A method of planarizing a microelectronic substrate,comprising: engaging the substrate with a planarizing medium; moving atleast one of the substrate and the medium with respect to the other totranslate the substrate across a planarizing surface of the medium; andrestraining fluid flow of a solution under the substrate with raisedfeatures that do not contact the substrate as the substrate translatesacross the planarizing surface to maintain a substantially contiguousdistribution of solution under the substrate.
 74. The method of claim 73wherein restraining fluid flow of the solution step comprises: providinga planarizing medium including a film impervious to the solution and aplurality of micro-features configured in a selected pattern on the filmthat entrap small volumes of solution under the substrate while thesubstrate translates across the planarizing surface; and depositing thesolution onto the film.
 75. The method of claim 74 wherein theplanarizing medium comprises a first portion and a second portion, theselected pattern being duplicated on the first and second portions, andwherein the method further comprises: engaging a first substrate withthe first portion; moving at least one of the first substrate and thefirst portion with respect to the other to translate the first substrateacross a planarizing surface of the first portion; replacing the firstportion with the second portion after planarizing the first substrate;engaging a second substrate with the second portion; moving at least oneof the second substrate and the second portion with respect to the otherto translate the second substrate across a planarizing surface of thesecond portion.
 76. The method of claim 75 wherein: the first and secondportions are formed together in a continuous web; and replacing thefirst portion with the second portion comprises advancing the web toremove the first portion from a base of a planarizing machine and toposition the second portion on the base.
 77. The method of claim 75wherein: the first and second portions are separate sheets; andreplacing the first portion with the second portion comprises unclampingthe first portion from a base of a planarizing machine, removing thefirst portion from the base, positioning the second portion on the base,and clamping the second portion on the base.
 78. The method of claim 74wherein: the film is composed of a substantially incompressible polymerand the micro-features comprise a plurality of nodules formed from thefilm, the nodules having a plurality of different shapes and heights;and the method further comprises preparing the medium for planarizationprior to engaging the substrate with the medium by flattening a portionof the nodules at a maximum height across the planarizing surface. 79.The method of claim 78 wherein flattening a portion of the nodulescomprises planarizing a sacrifice substrate on medium.
 80. A method ofplanarizing a microelectronic substrate, comprising: engaging thesubstrate with a planarizing medium including a film impervious to thesolution and a plurality of micro-features configured in a selectedpattern on the film; moving at least one of the substrate and the mediumwith respect to the other to translate the substrate across aplanarizing surface of the medium; supporting the substrate with atleast a portion of the micro-features having the greatest heights; andentrapping small volumes of solution between the micro-features andunder the substrate as the substrate translates across the planarizingsurface.
 81. The method of claim 80 wherein entrapping small volumes ofthe solution step comprises: configuring the selected pattern ofmicro-features on the film to inhibit fluid flow of the solution underthe substrate as the substrate translates across the planarizingsurface; and depositing the solution onto the film.
 82. The method ofclaim 81 wherein the planarizing medium comprises a first portion and asecond portion, and wherein the method further comprises: engaging afirst substrate with the first portion; moving at least one of the firstsubstrate and the first portion with respect to the other to translatethe first substrate across a planarizing surface of the first portion;replacing the first portion with the second portion after planarizingthe first substrate; engaging a second substrate with the secondportion; moving at least one of the second substrate and the secondportion with respect to the other to translate the second substrateacross a planarizing surface of the second portion.
 83. The method ofclaim 82 wherein: the first and second portions are formed together in acontinuous web; and replacing the first portion with the second portioncomprises advancing the web to remove the first portion from a base of aplanarizing machine and to position the second portion on the base. 84.The method of claim 82 wherein: the first and second portions areseparate sheets; and replacing the first portion with the second portioncomprises unclamping the first portion from a base of a planarizingmachine, removing the first portion from the base, positioning thesecond portion on the base, and clamping the second portion on the base.85. The method of claim 81 wherein: the film is composed of asubstantially incompressible polymer and the micro-features comprise aplurality of nodules formed from the film, the nodules having aplurality of different shapes and heights; and the method furthercomprises preparing the medium for planarization prior to engaging thesubstrate with the medium by flattening a portion of the nodules at amaximum height across the planarizing surface.
 86. The method of claim85 wherein flattening a portion of the nodules comprises planarizing asacrifice substrate on medium.
 87. A method of planarizing amicroelectronic substrate, comprising: depositing a planarizing solutiononto a planarizing medium having a film impervious to the solution and aplanarizing surface with a plurality of micro-features, themicro-features being configured in a selected pattern to entrap a volumeof the solution between the micro-features, and the selected patternbeing reproduced from a master pattern of micro-features so that theplanarizing medium may be duplicated; engaging the substrate with theplanarizing surface; and moving at least one of the substrate and themedium with respect to the other to translate the substrate across aplanarizing surface of the medium.
 88. The method of claim 87 whereinthe planarizing medium comprises a first portion and a second portion,the selected pattern being duplicated on the first and second portions,and wherein the method further comprises: engaging a first substratewith the first portion; moving at least one of the first substrate andthe first portion with respect to the other to translate the firstsubstrate across a planarizing surface of the first portion; replacingthe first portion with the second portion after planarizing the firstsubstrate; engaging a second substrate with the second portion; movingat least one of the second substrate and the second portion with respectto the other to translate the second substrate across a planarizingsurface of the second portion.
 89. The method of claim 88 wherein: thefirst and second portions are formed together in a continuous web; andreplacing the first portion with the second portion comprises advancingthe web to remove the first portion from a base of a planarizing machineand to position the second portion on the base.
 90. The method of claim88 wherein: the first and second portions are separate sheets; andreplacing the first portion with the second portion comprises unclampingthe first portion from a base of a planarizing machine, removing thefirst portion from the base, positioning the second portion on the base,and clamping the second portion on the base.
 91. The method of claim 87wherein: the film is composed of a substantially incompressible polymerand the micro-features comprise a plurality of nodules formed from thefilm, the nodules having a plurality of different shapes and heights;and the method further comprises preparing the medium for planarizationprior to engaging the substrate with the medium by flattening a portionof the nodules at a maximum height across the planarizing surface. 92.The method of claim 91 wherein flattening a portion of the nodulescomprises planarizing a sacrifice substrate on medium.
 93. A method ofmanufacturing microelectronic substrate polishing pads, comprising:forming a defined pattern of non-abrasive micro-features on aplanarizing surface of a first portion of a film impervious to aplanarizing solution; and duplicating the defined pattern ofmicro-features on a planarizing surface of a second portion of the film.94. The method of claim 93 wherein: the film comprises a polymer; andforming the defined pattern of micro-features on the first portion offilm comprises providing a die having a plurality of recesses arrangedin the defined pattern to form a plurality of first and second raisedfeatures, and embossing the first portion of film with the die to formthe defined pattern of first and second raised features on the surfaceof the film.
 95. The method of claim 94 wherein duplicating the definedpattern of micro-features on the second portion of film comprisesembossing the second portion of film with the die to duplicate thedefined pattern of first and second raised features on the surface ofthe film.
 96. The method of claim 93 wherein: the film comprises apolymer; and forming the defined pattern of micro-features on the firstportion of film comprises attaching a portion of fine mesh of wovenstrands to the first portion of film.
 97. The method of claim 96 whereinduplicating the defined pattern of micro-features on the second portionof film comprises attaching another portion of the fine mesh of wovenstrands to the second portion of film.
 98. The method of claim 96wherein the film comprises a polymer; and forming the defined pattern ofmicro-features on the first portion of film comprises etching the filmthrough a master pattern to from a plurality of first and second raisedfeatures across the surface of the film.
 99. The method of claim 98wherein etching the film comprises: forming a protective layer on thefilm having openings corresponding to depressions between the first andsecond raised features; and etching the film through the openings. 100.The method of claim 98 wherein duplicating the defined pattern ofmicro-features on the second portion of film comprises duplicating themaster pattern on the second portion of film and etching the filmthrough the duplicated master pattern to from a plurality of first andsecond raised features across the surface of the film.